The aim is to study the physical effects that limit the dynamic performance of devices for applications at very high frequencies to THz electronics.

It includes three complementary activities:

  • The experimental study of microelectronic and optoelectronic-by electrical and optical methods
  • Modeling of the main physical phenomena that play a key role in the functioning of the structures studied
  • Physical and electrical modeling of transistors, diodes, optoelectronic components and lines

Why terahertz (THz) frequency domain ?

Spectroscopy: THz signature of materials or molecules

Safety: detection of hazardous or explosive

Biology & Medicine: Medical imaging Non-Ionizing


ISSUES: Electronic sources based on semiconductor detectors and all the elements necessary for an electronic THz (passive elements, antenna, waveguide, …) 

Partners: IEMN (Lille), III/V Lab (GIE Nokia, Thales et CEA/LetiPalaiseau), GES (Montpellier), IES (Montpellier), GEEPS(Orsay), ESYCOM-MLV, ESISAR (Valence), STMicroelectronics (Crolles), IMEP-LAHC (Grenoble), IETR (Rennes)

Cotutelle avec l’université de Sherbrooke et le CRN2 (GaNEX)