The aim is to study the physical effects that limit the dynamic performance of devices for applications at very high frequencies to THz electronics.
It includes three complementary activities:
- The experimental study of microelectronic and optoelectronic-by electrical and optical methods
- Modeling of the main physical phenomena that play a key role in the functioning of the structures studied
- Physical and electrical modeling of transistors, diodes, optoelectronic components and lines
Why terahertz (THz) frequency domain ?
Spectroscopy: THz signature of materials or molecules
Safety: detection of hazardous or explosive
Biology & Medicine: Medical imaging Non-Ionizing
ISSUES: Electronic sources based on semiconductor detectors and all the elements necessary for an electronic THz (passive elements, antenna, waveguide, …)
Partners: IEMN (Lille), III/V Lab (GIE Nokia, Thales et CEA/LetiPalaiseau), GES (Montpellier), IES (Montpellier), GEEPS(Orsay), ESYCOM-MLV, ESISAR (Valence), STMicroelectronics (Crolles), IMEP-LAHC (Grenoble), IETR (Rennes)
Cotutelle avec l’université de Sherbrooke et le CRN2 (GaNEX)